Resistivity vs Temperature

 

 

 

 

The same deposition section;1)

Resistivity vs Temperature of Sputter Deposited VO2 films with different thicknesses on 1 inch quartz substrates
Reproducibility all thicknesses vo2
Thin thickness the switch does not clear, when increase thicknesses the resistivity is larger and properties switch is different these relation for purity and crystallinity. The grain not the same for all thicknesses
Write the results and discuss them in scientific paper
And also calculate the temperature switch

Reflectance of Sputter Deposited VO2 films with different thicknesses on 1-inch quartz substrates. Solid
line: 25°C ; Dash line: 100°
all vo2 have switch but the different switch properties 55nm at high temperature little reflectance .130nm at high temperature good reflectance metalic,210 nm at high temperature more good reflectance metallic. We know the FTIR is sensitive for thickness.

 

) Not the same deposition section but the same thickness 210 nm2)
There are several days between each test. Every time we clean the device and put the same parameters used previously, now we are studying to reproduce the same thickness.
Write the results and discuss them in scientific paper
And also calculate the temperature switch

Resistivity vs Temperature of 3 deposition tests of VO2 films on 4 inches SiO2/Si wafers using sputtering..
. The thickness of the films is 210 nm
We can deposit 4 inch we could reproducibility ,two tests the blue and black very same together , but the test red is different for resistivity .electrical properties have different but allis vo2

 

FTIR Reflectance of 3 deposition tests of VO2 films on 4 inches SiO2/Si wafers using sputtering. The
thickness of the films is 210 nm. Solid line: 25°C ; Dash line: 100°C
all the same optical properties all the tests at : 25°C less reflectance is window and at 100°C more reflectance is metallic.

 

 

 

 

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